Position: Home  > All Categories> Integrated Circuits (ICs) > PHN210

PHN210

Features: • Dual device• Low threshold voltage• Fast switching • Logic level compatible• Surface mount packageApplication• Motor and relay drivers • d.c. to d.c. converters• Logic level translatorSpecifications SYMBOL PARAMETER CONDITIONS MIN...

product image

PHN210 Picture
See larger image
SeekIC No. : 004460560 Detail

PHN210: Features: • Dual device• Low threshold voltage• Fast switching • Logic level compatible• Surface mount packageApplication• Motor and relay drivers • d.c. to...

PHN210 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
PHN210
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Dual device
• Low threshold voltage
• Fast switching
• Logic level compatible
• Surface mount package


Application

• Motor and relay drivers
• d.c. to d.c. converters
• Logic level translator


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Repetitive peak drain-source voltage Tj = 25   to 150 - 30 V
VDS Continuous drain-source voltage   - 30 V
VDGR Drain-gate voltage RGS = 20 k - 30 V
VGS Gate-source voltage   - ± 20 V
ID Drain current per MOSFET1 Ta = 25   Ta = 70 - 3.4 2.8 A A
ID Drain current per MOSFET (both MOSFETs conducting)1 Ta = 25   Ta = 70 - 2.4 1.9 A A
IDM Drain current per MOSFET (pulse peak value) Ta = 25 - 14 A
Ptot Total power dissipation (either or both MOSFETs conducting)1 Ta = 25   Ta = 70 - 2 1.3 W W
Tj, Tstg Storage & operating temperature   -65 150



Description

PHN210, Dual N-channel enhancement mode field-effect transistor in a plastic envelope using 'trench' technology.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Test Equipment
TOP853
TOP2005
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
View more