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PHN205

Features: · High-speed switching· No secondary breakdown· Very low on-state resistance.Application· Motor and actuator driver· Power management· Synchronized rectification.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per FET VDS drain-source voltage (DC) - 30 V ...

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SeekIC No. : 004460559 Detail

PHN205: Features: · High-speed switching· No secondary breakdown· Very low on-state resistance.Application· Motor and actuator driver· Power management· Synchronized rectification.Specifications SYMBOL...

PHN205 Data Sheet

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Part Number:
PHN205
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· High-speed switching
· No secondary breakdown
· Very low on-state resistance.


Application

· Motor and actuator driver
· Power management
· Synchronized rectification.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per FET
VDS drain-source voltage (DC)   - 30 V
VGS gate-source voltage (DC)   - ±20 V
ID drain current (DC) Ts = 80 ; note 1 - 6.4 A
IDM peak drain current note 2 - 25 A
Ptot total power dissipation Ts = 80 ; note 3 - 3.5 W
Tamb = 25 ; note 4 - 2.6 W
Tamb = 25 ; note 5 - 1.1 W
Tamb = 25 ; note 6 - 1.5 W
Tstg storage temperature   -65 +150
Tj operating junction temperature   -65 150
Source-drain diode
IS source current (DC) Ts = 80 - 3.5 A
ISM peak source current note 2 - 14 A



Description

PHN205, Two N-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package.




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