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PHN110

Features: · High-speed switching· No secondary breakdown· Very low on-resistance.Application· Motor and actuator driver· Power management· Synchronized rectification.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) - 30 V VGS gate-sourc...

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SeekIC No. : 004460557 Detail

PHN110: Features: · High-speed switching· No secondary breakdown· Very low on-resistance.Application· Motor and actuator driver· Power management· Synchronized rectification.Specifications SYMBOL PARA...

PHN110 Data Sheet

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Part Number:
PHN110
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

· High-speed switching
· No secondary breakdown
· Very low on-resistance.


Application

· Motor and actuator driver
· Power management
· Synchronized rectification.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage (DC)   - 30 V
VGS gate-source voltage (DC)   - ±20 V
ID drain current (DC) Ts = 80 ; note 1 - 4 A
IDM peak drain current note 2 - 16 A
Ptot total power dissipation Ts = 80 ; - 2.8 W
Tamb = 25 ; note 3 - 2.4 W
Tamb = 25 ; note 4 - 1.1 W
Tstg storage temperature   -65 +150
Tj operating junction temperature   -65 +150
Source-drain diode
IS source current (DC) Ts = 80 °C - 3.5 A
ISM peak source current note 2 - 14 A



Description

PHN110, N-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8) package.


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