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PHK5NQ15T

Features: · Low on-state resistance· Surface mount packageApplication· DC-DC primary side switching· General purpose switchPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj = 25 to 150 °C - 200 V VDGR drain-ga...

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SeekIC No. : 004460516 Detail

PHK5NQ15T: Features: · Low on-state resistance· Surface mount packageApplication· DC-DC primary side switching· General purpose switchPinoutSpecifications Symbol Parameter Conditions Min Max...

PHK5NQ15T Data Sheet

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Part Number:
PHK5NQ15T
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Low on-state resistance
· Surface mount package


Application

· DC-DC primary side switching
· General purpose switch


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS
 drain-source voltage (DC) Tj = 25 to 150 °C
-
200
V
VDGR
 drain-gate voltage (DC) Tj = 25 to 150 °C; RGS = 20 k
-
200
V
VGS
 gate-source voltage (DC)  
-
±20
V
ID
 drain current (DC) Tsp = 25 °C; VGS = 10 V; Figure 2 and 3
-
5
A
Tsp = 100 °C; VGS = 10 V; Figure 2
-
3.23
A
IDM
 peak drain current Tsp = 25 °C; pulsed; tp 10 s;Figure 3
-
20
A
Ptot
 total power dissipation Tsp = 25 °C; Figure 1
-
62.5
W
Tstg
 storage temperature  
-55
+150
°C
Tj
 junction temperature  
-55
+150
°C
Source-drain diode
IS
 source (diode forward) current (DC) Tsp = 25 °C
-
5
A
ISM
 peak source (diode forward) current Tsp = 25 °C; tp 10 s
-
20
A



Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Product availability:PHK5NQ15T in SOT96-1 (SO8).




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