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PHK5NQ10T

Features: • Low on-state resistance• Fast switching • Low profile surface mount packageApplication• Motor and relay drivers • d.c. to d.c. convertersSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage Tj = 25 °C to 150°C ...

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SeekIC No. : 004460515 Detail

PHK5NQ10T: Features: • Low on-state resistance• Fast switching • Low profile surface mount packageApplication• Motor and relay drivers • d.c. to d.c. convertersSpecifications ...

PHK5NQ10T Data Sheet

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Part Number:
PHK5NQ10T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• Low on-state resistance
• Fast switching
• Low profile surface mount
   package


Application

• Motor and relay drivers
• d.c. to d.c. converters


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage Tj = 25 °C to 150°C - 100 V
VDGR Drain-gate voltage Tj = 25 °C to 150°C; RGS = 20 k - 100 V
VGS Gate-source voltage - - ± 20 V
ID Drain current (tp 10 s) Ta = 25 °C Ta = 70 °C - 5 3.6 A A
IDM Drain current (pulse peak value)
 Ta = 25 °C - 20 A
Ptot Total power dissipation Ta = 25 °C, t 10 s Ta = 70 °C, t 10 s - 2.5 1.6 W W
Tj Tstg operating temperature and Storage temperature   -55 150 °C



Description

PHK5NQ10T N-channel enhancement mode field-effect transistor in a plastic envelope using 'trench' technology.


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