Features: · NPN Silicon Microwave Power Transistor ·Common Base Configuration ·Broadband Class C Operation · High Efficiency Interdigitated Geometry · Diffused Emitter Ballasting Resistors ·Gold Metalization System · Internal Input Impedance Matching · Hermetic Metal/Ceramic Package Specifications...
PHI214-20EL: Features: · NPN Silicon Microwave Power Transistor ·Common Base Configuration ·Broadband Class C Operation · High Efficiency Interdigitated Geometry · Diffused Emitter Ballasting Resistors ·Gold Met...
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Features: ·NPN Silicon Microwave Power Transistor ·Common Emitter Configuration ·Broadband Class A...
Features: `NPN Silicon Microwave Power Transistor`Common Base Configuration`Broadband Class C Oper...
Parameter | Symbol | Rating | Units |
Collector-Emitter Voltage | VCES | 70 | v |
Emitter-Base Voltage | VEBO | 3.0 | v |
Collector Current (Peak) | IC | 1.5 | A |
Total Power Dissipation | P TOT | 25 | W |
JunctionTemperature | Tj | 200 | |
Storage Temperature | T STG | -65 to +200 |