Features: ·NPN Silicon Microwave Power Transistor ·Common Emitter Configuration ·Broadband Class A Operation ·Matrix Geometry ·Diffused Emirter Ballasting Resistors ·Gold Metalization System ·Internal Input Impedance Matching ·Hermetic~MetalKeramic Package Specifications Parameter Symbol ...
PHI214-0851: Features: ·NPN Silicon Microwave Power Transistor ·Common Emitter Configuration ·Broadband Class A Operation ·Matrix Geometry ·Diffused Emirter Ballasting Resistors ·Gold Metalization System ·Intern...
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Features: · NPN Silicon Microwave Power Transistor ·Common Base Configuration ·Broadband Class C O...
Features: `NPN Silicon Microwave Power Transistor`Common Base Configuration`Broadband Class C Oper...
Parameter | Symbol | Rating | Units |
Collector-Emitter Voltage | VCES | 27 | v |
Collector-Emitter Voltage | VCEC | 20 | v |
Emitter-BaseVoltage | V ES0 | 3.5 | v |
Collector Current (Peak) | Ic | 130 | mA |
Total Power Dissipation | P TOT | 7.8 | w |
JunctionTemperature | Tj | 200 | |
Storage Temperature | T STG | -65 to +200 |