PHD6N10E

Features: N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performancewith low thermal resistance. Intended for use in Switched M...

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SeekIC No. : 004460461 Detail

PHD6N10E: Features: N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switc...

floor Price/Ceiling Price

Part Number:
PHD6N10E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface  mounting featuring high avalanche  energy capability, stable blocking  voltage, fast switching and high  thermal cycling performancewith low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.




Application

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.




Description

PHD6N10E N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface  mounting featuring high avalanche  energy capability, stable blocking  voltage, fast switching and high  thermal cycling performancewith low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.




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