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PHD63NQ03LT

Features: Logic level compatible n Low gate chargeApplicationDC to DC converters n Switched mode power suppliesSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C Tj 175 - 30 V VDGR drain-gate voltage (DC) 25 °C Tj 175 ; RGS = 20 ...

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SeekIC No. : 004460458 Detail

PHD63NQ03LT: Features: Logic level compatible n Low gate chargeApplicationDC to DC converters n Switched mode power suppliesSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source ...

PHD63NQ03LT Data Sheet

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Part Number:
PHD63NQ03LT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

Logic level compatible n Low gate charge


Application

DC to DC converters n Switched mode power supplies


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 °C Tj 175 - 30 V
VDGR drain-gate voltage (DC) 25 °C Tj 175 ; RGS = 20 k - 30 V
VGS gate-source voltage (DC)   - ±20 V
VGSM
 peak gate-source voltage tp 50 ms; pulsed; duty cycle = 25 % - ±25 V
ID drain current (DC) Tmb = 25 ; VGS = 10 V; Figure 2 and 3 - 68.9 A
Tmb = 100 ; VGS = 10 V; Figure 2 - 48.7 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 ms; Figure 3 - 240 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 111 W
Tstg storage temperature   -55 +175
Tj junction temperature   -55 +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 68.9 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 ms - 48.7 A



Description

N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PHP63NQ03LT in SOT78 (TO-220AB)
PHB63NQ03LT in SOT404 (D2-PAK)
PHD63NQ03LT in SOT428 (D-PAK).




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