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PHD14NQ20T

Features: · Low on-state resistance· Fast switchingApplication· DC to DC converters · General purpose switchingPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj= 25 to 175 °C - 200 V VDGR drain-gate voltage (D...

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SeekIC No. : 004460429 Detail

PHD14NQ20T: Features: · Low on-state resistance· Fast switchingApplication· DC to DC converters · General purpose switchingPinoutSpecifications Symbol Parameter Conditions Min Max Unit ...

PHD14NQ20T Data Sheet

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Part Number:
PHD14NQ20T
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Low on-state resistance
· Fast switching


Application

· DC to DC converters
· General purpose switching




Pinout

Connection Diagram




Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS
 drain-source voltage (DC) Tj= 25 to 175 °C
-
200
V
VDGR
 drain-gate voltage (DC) Tj = 25 to 175 °C; RGS = 20 k
-
200
V
VGS
 gate-source voltage  
-
±20
V
ID
 drain current (DC) VGS = 10 V; Figure 2 and 3
Tmb = 25 °C
-
14
A
 peak drain current Tmb = 100 °C
-
10
A
IDM
 total power dissipation Tmb = 25 °C; pulsed; tp 10 s;
Figure 3
-
56
A
Ptot
 storage temperature Tmb = 25 °C; Figure 1
-
125
W
Tstg
 operating junction temperature  
-55
+175
°C
Tj
    
-55
+175
°C
Source-drain diode
IS
 source (diode forward) current (DC) Tmb = 25 °C
-
14
A
ISM
 peak source(diode forward) current Tmb = 25 °C; pulsed; tp10 s
-
56
A
Avalanche ruggedness
EDS(ALS)
 non-repetitive avalanche energy unclamped inductive load; ID = 14 A; tp = 20 s; VDD 25 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 °C;Figure 15
-
70
mJ
EDS(ALS)
 peak non-repetitive avalanche current
-
14
A



Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
Product availability:
PHP14NQ20T in SOT78 (TO-220AB)
PHB14NQ20T in SOT404 (D2-PAK)
PHD14NQ20T in SOT428 (D-PAK).


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