Position: Home  > All Categories> Integrated Circuits (ICs) > PHD108NQ03LT

PHD108NQ03LT

Features: ·Logic level compatible·Very low on-state resistanceApplication·DC to DC converters·Switched mode power suppliesPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 Tj 175 - 25 V VDGR drain-gate voltage (DC) 25 Tj 17...

product image

PHD108NQ03LT Picture
See larger image
SeekIC No. : 004460423 Detail

PHD108NQ03LT: Features: ·Logic level compatible·Very low on-state resistanceApplication·DC to DC converters·Switched mode power suppliesPinoutSpecifications Symbol Parameter Conditions Min Max Unit V...

PHD108NQ03LT Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
PHD108NQ03LT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Logic level compatible
·Very low on-state resistance


Application

·DC to DC converters
·Switched mode power supplies


Pinout

Connection Diagram




Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 175 - 25 V
VDGR drain-gate voltage (DC) 25 Tj 175 ; RGS = 20 k - 25 V
ID drain current (DC) Tmb = 25 ; VGS = 5 V; Figure 2 and 3 - 75 A
Tmb = 100 ; VGS = 5 V; Figure 2 and 3 - 60 A
VGS gate-source voltage   - ±20 V
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 108 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 180 W
Tstg storage temperature   -55 +175
Tj junction temperature   -55 +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 75 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 108 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy		 unclamped inductive load; ID = 43A;
tp = 0.25 ms; VDD 15 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 		- 180 mJ



Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Product availability:

PHP108NQ03LT in SOT78 (TO-220AB)

PHB108NQ03LT in SOT404 (D2-PAK)

PHD108NQ03LT in SOT428 (D-PAK).


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Kits
IT243
UVSC-110-4E1
Connectors, Interconnects
ASP-134488-01
WM4078-ND
RF and RFID
X3C26P1-30S
1P620S
View more