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PHB38N02LT

Features: ·Low on-state resistance·2.5 V gate drive.Application·Linear regulator for DDR memory.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 Tj 175 - 20 V VDGR drain-gate voltage (DC) 25 Tj 175 ; RGS = 20 k - 20 V ...

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SeekIC No. : 004460361 Detail

PHB38N02LT: Features: ·Low on-state resistance·2.5 V gate drive.Application·Linear regulator for DDR memory.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (...

PHB38N02LT Data Sheet

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Part Number:
PHB38N02LT
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

·Low on-state resistance
·2.5 V gate drive.


Application

·Linear regulator for DDR memory.


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 175 - 20 V
VDGR drain-gate voltage (DC) 25 Tj 175 ; RGS = 20 k - 20 V
VGS gate-source voltage (DC) - 12 V
ID drain current (DC) Tmb = 25 ; VGS = 5 V; Figure 2 and 3 - 44.7 A
Tmb = 100 ; VGS = 5 V; Figure 2 - 31.6 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 ms; Figure 3 - 179 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 57.6 W
Tstg storage temperature +175
Tj junction temperature +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 44.7 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 ms - 179 A



Description

N-channel logic level field-effect transistor in a plastic package using TrenchMOS™ technology.

Product availability:

PHB38N02LT in SOT404 (D2-PAK)

PHD38N02LT in SOT428 (D-PAK).


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