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PHB32N06LT

Features: ·TrenchMOS™ technology·Logic level compatible.Application·General purpose switching·Switched mode power supplies.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) - 60 V VDGR drain-gate voltage (DC) RGS = 20 k - 60...

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SeekIC No. : 004460355 Detail

PHB32N06LT: Features: ·TrenchMOS™ technology·Logic level compatible.Application·General purpose switching·Switched mode power supplies.PinoutSpecifications Symbol Parameter Conditions Min Max Un...

PHB32N06LT Data Sheet

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Part Number:
PHB32N06LT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/17

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Product Details

Description



Features:

·TrenchMOS™ technology
·Logic level compatible.


Application

·General purpose switching
·Switched mode power supplies.


Pinout

Connection Diagram




Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC)   - 60 V
VDGR drain-gate voltage (DC) RGS = 20 k - 60 V
VGS gate-source voltage (DC)   - ±15 V
VGSM non-repetitive gate-source voltage tp 50 s   ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 5 V; Figure 2 and 3 - 34 A
Tmb = 100 ; VGS = 5 V; Figure 2 - 24 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 136 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 97 W
Tstg storage temperature   -55 +175
Tj operating junction temperature   -55 +175
Source-drain diode
IS reverse drain current (DC) Tmb = 25 - 34 A
ISM pulsed reverse drain current Tmb = 25 ; pulsed; tp 10 s - 136 A
Avalanche ruggedness
WDSS non-repetitive
avalanche energy		 unclamped inductive load; ID = 20 A;
tp = 0.11 ms; VDS 25 V;VGS = 5 V; RGS = 50 ; starting at Tj = 25 		- 100 mJ



Description

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology.

Product availability:

PHP32N06LT in SOT78 (TO220AB)

PHB32N06LT in SOT404 (D2-PAK).


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