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PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSVDGR±VGSIDIDIDMPtotTstg, Tj Drain-source voltageDrain-gate voltageGate-source voltageDrain current (DC)Drain current (DC)Drain current (pulse peak value)Total power dissipationStorage & operating temperature -RGS...

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PHB36N06E: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSVDGR±VGSIDIDIDMPtotTstg, Tj Drain-source voltageDrain-gate voltageGate-source voltageDrain current (DC)Drain current ...

PHB36N06E Data Sheet

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Part Number:: PHB36N06E
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/25

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Product Details

Description

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DS V_DGR±V_GSI_DI_DI_DMP_totT_stg, T_j	Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature	- R_GS = 20 k - T_mb = 25 T_mb = 100 T_mb= 25 T_mb= 25 -	- - - - - - - - 55	60 60 30 41 29 164 125 175 175	V V V A A A W

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.The PHB36N06E device is intended for use in automotive and general purpose switching applications.

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PHB36N06E

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