MOSFET TRENCHMOS
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Features: • 'Trench' technology• Very low on-state resistance• Fast switching...
Features: ·TrenchMOS™ technology·Logic level compatible.Application·General purpose switchin...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 32.7 A | ||
Resistance Drain-Source RDS (on) : | 0.077 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-404 | Packaging : | Reel |
Technical/Catalog Information | PHB33NQ20T,118 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 32.7A |
Rds On (Max) @ Id, Vgs | 77 mOhm @ 15A, 10V |
Input Capacitance (Ciss) @ Vds | 1870pF @ 25V |
Power - Max | 230W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 32.2nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Logic Level Gate |
Drawing Number | 568; SOT404; ; |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PHB33NQ20T,118 PHB33NQ20T,118 |