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PHB33NQ20T

Features: ·Low on-state resistance·Low thermal resistance·Fast switching·Low gate charge.Application·DC-to-DC primary side switching.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 Tj 175 - 200 V VDGR drain-gate voltage (DC) ...

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SeekIC No. : 004460356 Detail

PHB33NQ20T: Features: ·Low on-state resistance·Low thermal resistance·Fast switching·Low gate charge.Application·DC-to-DC primary side switching.PinoutSpecifications Symbol Parameter Conditions Min Max...

PHB33NQ20T Data Sheet

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Part Number:
PHB33NQ20T
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

·Low on-state resistance
·Low thermal resistance
·Fast switching
·Low gate charge.


Application

·DC-to-DC primary side switching.


Pinout

Connection Diagram




Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 175 - 200 V
VDGR drain-gate voltage (DC) 25 Tj 175 ; RGS = 20 k - 200 V
VGS gate-source voltage (DC)   - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10 V; Figure 2 and 3 - 32.7 A
Tmb = 100 ; VGS = 10 V; Figure 2 - 23.1 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 65.4 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 230 W
Tstg storage temperature   -55 +175
Tj junction temperature   -55 +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 32.7 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 65.4 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy		 unclamped inductive load; ID = 10.4 A;
tp = 0.14 ms; VDD 200 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 		- 190 mJ



Description

PHB33NQ20T Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology.


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