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PHB2N50

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IDIDMPDD/TmbVGSEASIASTj, Tstg Continuous drain currentPulsed drain currentTotal dissipationLinear derating factorGate-source voltageSingle pulse avalancheenergyPeak avalanche currentOperating junction andstorage temperat...

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PHB2N50: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IDIDMPDD/TmbVGSEASIASTj, Tstg Continuous drain currentPulsed drain currentTotal dissipationLinear derating factorGate-so...

PHB2N50 Data Sheet

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Part Number:
PHB2N50
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ID
IDM
PD
D/Tmb
VGS
EAS
IAS
Tj, Tstg		 Continuous drain current
Pulsed drain current
Total dissipation
Linear derating factor
Gate-source voltage
Single pulse avalanche
energy
Peak avalanche current
Operating junction and
storage temperature range		 Tmb = 25 ; VGS = 10 V
Tmb = 100 ; VGS = 10 V
Tmb = 25
Tmb = 25
Tmb > 25
VDD 50 V; starting Tj = 25; RGS = 50 ;
VGS = 10 V
VDD 50 V; starting Tj = 25; RGS = 50 ;
VGS = 10 V		 -
-
-
-
-
-
-
-
- 55		 2
1.3
8
50
0.4
± 30
100
2
150		 A
A
A
W
W/K
V
mJ
A



Description

PHB2N50 N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.




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