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PHB20N06T

Features: ·Very low on-state resistance·Fast switching.Application·Switched mode power supplies·DC to DC converters.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) - 55 V VDGR drain-gate voltage (DC) RGS = 20 k - 55 V VGS g...

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SeekIC No. : 004460339 Detail

PHB20N06T: Features: ·Very low on-state resistance·Fast switching.Application·Switched mode power supplies·DC to DC converters.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS dr...

PHB20N06T Data Sheet

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Part Number:
PHB20N06T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

·Very low on-state resistance
·Fast switching.


Application

·Switched mode power supplies
·DC to DC converters.


Pinout

Connection Diagram




Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC)   - 55 V
VDGR drain-gate voltage (DC) RGS = 20 k - 55 V
VGS gate-source voltage (DC)   - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10 V; Figure 2 and 3 - 20.3 A
Tmb = 100 ; VGS = 10 V; Figure 2 - 14.3 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 81 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 62 W
Tstg storage temperature   -55 +175
Tj operating junction temperature   -55 +175
Source-drain diode
IDR reverse drain current (DC) Tmb = 25 - 20.3 A
IDRM pulsed reverse drain current Tmb = 25 ; pulsed; tp 10 s - 81 A
Avalanche ruggedness
WDSS non-repetitive
avalanche energy		 unclamped inductive load; ID = 11 A;
VDS 55 V;VGS = 10 V; RGS = 50 ; starting Tj = 25 		- 30.3 mJ



Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability:

PHP20N06T in SOT78 (TO-220AB)

PHB20N06T in SOT404 (D 2-PAK).


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