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PHB29N08T

Features: ·High noise immunity·Low on-state resistance.Application·Industrial motor control.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 Tj 175 - 75 V VDGR drain-gate voltage (DC) 25 Tj 175 ; RGS = 20 k - 75 V VG...

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SeekIC No. : 004460350 Detail

PHB29N08T: Features: ·High noise immunity·Low on-state resistance.Application·Industrial motor control.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) ...

PHB29N08T Data Sheet

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Part Number:
PHB29N08T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

·High noise immunity
·Low on-state resistance.


Application

·Industrial motor control.


Pinout

Connection Diagram




Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 175 - 75 V
VDGR drain-gate voltage (DC) 25 Tj 175 ; RGS = 20 k - 75 V
VGS gate-source voltage (DC) - ±30 V
ID drain current (DC) Tmb = 25 ; VGS = 11 V; Figure 2 and 3 - 27 A
Tmb = 100 ; VGS = 11 V; Figure 2 - 19.2 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 108 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 88 W
Tstg storage temperature +175
Tj junction temperature +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 27 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 108 A



Description

PHB29N08T N-channel standard level field-effect power transistor in a plastic package using TrenchMOS™ technology.

Product availability:

PHP29N08T in SOT78 (TO-220AB)

PHB29N08T in SOT404 (D2-PAK).


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