PHB27NQ10T,118

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 28 A
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 0.05 Ohms
Package / Case : SOT-404


Parameters:

Technical/Catalog Information	PHB27NQ10T,118
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	28A
Rds On (Max) @ Id, Vgs	50 mOhm @ 14A, 10V
Input Capacitance (Ciss) @ Vds	1240pF @ 25V
Power - Max	107W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	30nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Drawing Number	568; SOT404; ;
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PHB27NQ10T,118 PHB27NQ10T,118