PHB27NQ10T

The PHB27NQ10T is N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology.These PHB27NQ10T products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

Features of the PHB27NQ10T are:(1)'Trench' technology; (2)Low on-state resistance; (3)Fast switching; (4)Low thermal resistance.The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.No liability will be accepted by the publisher for any consequence of its use.Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

The absolute maximum ratings of the PHB27NQ10T can be summarized as:(1)drain-source voltage:100 V;(2)storage temperature range:-55 to 175;(3)gate-source voltage:±20 V;(4)operating temperature:-55 to 175;(5)drain-gate voltage:100V;(6)continuous drain current:28A;(7)pulsed drain current:20A.Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134).Stress above one or more of the limiting values may cause permanent damage to the device.These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.Exposure to limiting values for extended periods may affect device reliability.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).