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PHB23NQ15T

Features: • 'Trench' technology• Low on-state resistance• Fast switching• Low thermal resistancePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSSVDGRVGSIDIDMPtotTj, Tstg Drain-source voltageDrain-gate voltageGate-source voltageContinuous dra...

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SeekIC No. : 004460346 Detail

PHB23NQ15T: Features: • 'Trench' technology• Low on-state resistance• Fast switching• Low thermal resistancePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V...

PHB23NQ15T Data Sheet

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Part Number:
PHB23NQ15T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• 'Trench' technology
• Low on-state resistance
• Fast switching
• Low thermal resistance


Pinout

Connection Diagram




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDSS
VDGR
VGS

ID
IDM
Ptot
Tj, Tstg		 Drain-source voltage
Drain-gate voltage
Gate-source voltage

Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature		 Tj = 25 to 175
Tj = 25 to 175; RGS = 20 k

Tmb = 25 ;VGS = 10 V
Tmb = 100 ;VGS = 10 V
Tmb = 25
Tmb = 25 		-
-
-
-
-
-
-
- 55		 150
150
± 20
23
16
92
136
175		 V
V
V
A
A
A
W



Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology. The PHB23NQ15T  has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.




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