PHB23NQ10LT,118

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 100V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Gate Charge (Qg) @ Vgs: 49nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 23A
Series: TrenchMOS™
Manufacturer: NXP Semiconductors
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 72 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds: 1704pF @ 25V
Power - Max: 98W


Parameters:

Technical/Catalog Information	PHB23NQ10LT,118
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	23A
Rds On (Max) @ Id, Vgs	72 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	1704pF @ 25V
Power - Max	98W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	49nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Drawing Number	568; SOT404; ;
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PHB23NQ10LT,118 PHB23NQ10LT,118