Position: Home  > All Categories> Integrated Circuits (ICs) > PHB222NQ04LT

PHB222NQ04LT

Features: ·Logic level threshold·Very low on-state resistance.Application·Motors, lamps, solenoids·DC-to-DC converters·Uninterruptible power supplies·General industrial applications.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 Tj ...

product image

PHB222NQ04LT Picture
See larger image
SeekIC No. : 004460343 Detail

PHB222NQ04LT: Features: ·Logic level threshold·Very low on-state resistance.Application·Motors, lamps, solenoids·DC-to-DC converters·Uninterruptible power supplies·General industrial applications.PinoutSpecificat...

PHB222NQ04LT Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
PHB222NQ04LT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Logic level threshold
·Very low on-state resistance.


Application

·Motors, lamps, solenoids
·DC-to-DC converters
·Uninterruptible power supplies
·General industrial applications.


Pinout

Connection Diagram




Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 175 - 40 V
VDGR drain-gate voltage (DC) 25 Tj 175 ; RGS = 20 k - 40 V
VGS gate-source voltage (DC)   - ±15 V
ID drain current (DC) Tmb = 25 ; VGS = 10 V; Figure 2 and 3 - 75 A
Tmb = 100 ; VGS = 10 V; Figure 2 - 75 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 240 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 300 W
Tstg storage temperature   -55 +175
Tj junction temperature   -55 +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 75 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 240 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy		 unclamped inductive load; ID = 75 A;
tp = 0.29 ms; VDD 40 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 		- 560 mJ



Description

PHB222NQ04LT, Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Optoelectronics
SFH7770
TLP423J
Integrated Circuits (ICs)
TA8435H
1MB12-140
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Isolators
HCPL062N
HCPL316J
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Prototyping Products
AVT4168
DE1
View more