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PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSVDGR±VGSIDIDIDMPtotTstg, Tj Drain-source voltageDrain-gate voltageGate-source voltageDrain current (DC)1Drain current (DC)1Drain current (pulse peak value)Total power dissipationStorage & operating temperature -R...

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SeekIC No. : 004460342 Detail

PHB21N06T: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSVDGR±VGSIDIDIDMPtotTstg, Tj Drain-source voltageDrain-gate voltageGate-source voltageDrain current (DC)1Drain current...

PHB21N06T Data Sheet

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Part Number:: PHB21N06T
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/11/25

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PHB20N06T evaluate
Features: ·Very low on-state resistance·Fast switching.Application·Switched mode power supplies·DC...
PHB20N06T /T3 evaluate
MOSFET RAIL MOSFET
PHB20N06T,118 evaluate
US $.4 - .58 / Piece

MOSFET RAIL MOSFET

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Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DS V_DGR±V_GSI_DI_DI_DMP_totT_stg, T_j	Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC)1 Drain current (DC)1 Drain current (pulse peak value) Total power dissipation Storage & operating temperature	- R_GS = 20 k - T_mb = 25 T_mb = 100 T_mb= 25 T_mb= 25 -	- - - - - - - - 55	55 55 20 21 14.7 84 69 175	V V V A A A W

Description

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technology the PHB21N06T features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.

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PHB21N06T

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