Position: Home  > All Categories> Integrated Circuits (ICs) > PH3855L

PH3855L

Features: ·Logic level threshold·Surface mounted package.Application·DC-to-DC converters·Motors, lamps, solenoids·General purpose power switching·12 V and 24 V loads.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 Tj 175 - 55 V ...

product image

PH3855L Picture
See larger image
SeekIC No. : 004460280 Detail

PH3855L: Features: ·Logic level threshold·Surface mounted package.Application·DC-to-DC converters·Motors, lamps, solenoids·General purpose power switching·12 V and 24 V loads.PinoutSpecifications Symbol...

PH3855L Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
PH3855L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Logic level threshold
·Surface mounted package.


Application

·DC-to-DC converters
·Motors, lamps, solenoids
·General purpose power switching
·12 V and 24 V loads.


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 175 - 55 V
VDGR drain-gate voltage (DC) 25 Tj 175 ; RGS = 20 k - 55 V
VGS gate-source voltage (DC)   - ±15 V
ID drain current (DC) Tmb = 25 ; VGS = 5 V; Figure 2 and 3 - 24 A
Tmb = 100 ; VGS = 5 V; Figure 2 - 17.2 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 45 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 50 W
Tstg storage temperature   -55 +175
Tj junction temperature   -55 +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 24 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 45 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy		 unclamped inductive load; ID = 30 A;
tp = 0.04 ms; VDD 55 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 		- 40 mJ



Description

PH3855L, Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Tapes, Adhesives
803
AC452-2
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Cable Assemblies
CS1W-CN114
XW2Z-500T
View more