Position: Home  > All Categories> Integrated Circuits (ICs) > PH3830L

PH3830L

Features: ·Low thermal resistance·Logic level gate drive·SO8 equivalent area footprint·Low on-state resistance.Application·DC-to-DC converters·Portable appliances·Switched-mode power supplies·Notebook computers.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-s...

product image

PH3830L Picture
See larger image
SeekIC No. : 004460279 Detail

PH3830L: Features: ·Low thermal resistance·Logic level gate drive·SO8 equivalent area footprint·Low on-state resistance.Application·DC-to-DC converters·Portable appliances·Switched-mode power supplies·Notebo...

PH3830L Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
PH3830L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Low thermal resistance
·Logic level gate drive
·SO8 equivalent area footprint
·Low on-state resistance.


Application

·DC-to-DC converters
·Portable appliances
·Switched-mode power supplies
·Notebook computers.


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 150 - 30 V
VGS gate-source voltage (DC)   - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10 V; Figure 2 and 3 - 98 A
Tmb = 100 ; VGS = 10 V; Figure 2 - 62 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 290 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 62.5 W
Tstg storage temperature   -55 +150
Tj junction temperature   -55 +150
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 52 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 150 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy		 unclamped inductive load; ID = 70.7 A;
tp = 0.1 ms; VDD 30 V; VGS = 10 V; starting at Tj = 25 		- 250 mJ



Description

PH3830L, N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Tapes, Adhesives
803
AC452-2
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Kits
IT243
UVSC-110-4E1
Audio Products
HUC1002
WM-64CT
View more