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PH3230S

Features: ·Logic level compatible·High density mounting·Low gate charge·Very low on-state resistance.Application·DC-to-DC converters·Notebook computers·Switched-mode power supplies·Computer motherboards.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source vo...

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SeekIC No. : 004460277 Detail

PH3230S: Features: ·Logic level compatible·High density mounting·Low gate charge·Very low on-state resistance.Application·DC-to-DC converters·Notebook computers·Switched-mode power supplies·Computer motherbo...

PH3230S Data Sheet

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Part Number:
PH3230S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

·Logic level compatible
·High density mounting
·Low gate charge
·Very low on-state resistance.


Application

·DC-to-DC converters
·Notebook computers
·Switched-mode power supplies
·Computer motherboards.


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 150 - 30 V
VGS gate-source voltage   - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10 V; Figure 2 and 3 - 100 A
Tmb = 100 ; VGS = 10 V; Figure 2 - 63 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 300 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 62.5 W
Tstg storage temperature   -55 +150
Tj junction temperature   -55 +150
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 52 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 156 A
Avalanche ruggedness
EDS(AL)R repetitive drain-source avalanche
energy		 Tj = 25 ; RGS 50 W; IDS(AL)R = 5 A;
VDD = 15 V; duty < 0.1%		 - 2.5 mJ
EDS(AL)S non-repetitive drain-source
avalanche energy		 unclamped inductive load; ID = 50 A; VDD 15 V; RGS = 50 ;
VGS = 10 V;starting Tj = 25 °C		 - 250 mJ



Description

PH3230S, N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology.


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