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PH3230

Features: ·Logic level compatible·Low drive current·High density mounting·Very low on-state resistance.Application·DC-to-DC converters·Computer motherboards·Switched mode power supplies.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 ...

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SeekIC No. : 004460276 Detail

PH3230: Features: ·Logic level compatible·Low drive current·High density mounting·Very low on-state resistance.Application·DC-to-DC converters·Computer motherboards·Switched mode power supplies.PinoutSpecif...

PH3230 Data Sheet

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Part Number:
PH3230
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

·Logic level compatible
·Low drive current
·High density mounting
·Very low on-state resistance.


Application

·DC-to-DC converters
·Computer motherboards
·Switched mode power supplies.


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 150 - 30 V
VGS gate-source voltage   - ±20 V
ID drain current (DC) VGS = 10 V;Tmb = 25 ; Figure 2 and 4 - 50 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 4 - 200 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 42 W
Tstg storage temperature   -55 +150
Tj junction temperature   -55 +150
Source-drain diode
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 50 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy		 Tj = 25 - 5 A
EDS(AL)R repetitive drain-source avalanche
energy		 Tj = 25 ; RGS 50 ; IDS(AL)R = 5 A;
VDD = 15 V; duty cycle < 0.1%; Figure 3 and 16
 - 2.5 mJ



Description

The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 (LFPAK) package.

Product availability:

PH3230 in SOT669 (LFPAK).


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