Features: `NPN Silicon Power Transistor`Common Base Configuration`Broadband Class C Operation`High Efficiency InterdigitatedGeometry`Diffused Emitter Ballasting Resistors`Gold Metalization System`Internal Input and Output Impedance Matching`Hermetic' FleWCeramic PackageSpecifications Paramete...
PH2931 -135S: Features: `NPN Silicon Power Transistor`Common Base Configuration`Broadband Class C Operation`High Efficiency InterdigitatedGeometry`Diffused Emitter Ballasting Resistors`Gold Metalization System`In...
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Parameter | Symbol | Rating | Units |
Collector-Emitter Voltage | VCES | 80 | V |
Emitter-Base Voltage | VEBO | 3.0 | V |
Collector Current (Peak) | IC | 12 | A |
Total Power Dissipation | PTOT | 580 | W |
Junction Temperature | Tj | 200 | |
Storage Temperature |
Tstg | -65 to +200 |