Position: Home  > All Categories> Integrated Circuits (ICs) > PH2920

PH2920

Features: ·Low thermal resistance·Low gate drive current·SO8 equivalent area footprint·Low on-state resistance.Application·DC-to-DC converters·Portable appliances·Switched mode power supplies·Notebook computers.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-s...

product image

PH2920 Picture
See larger image
SeekIC No. : 004460249 Detail

PH2920: Features: ·Low thermal resistance·Low gate drive current·SO8 equivalent area footprint·Low on-state resistance.Application·DC-to-DC converters·Portable appliances·Switched mode power supplies·Notebo...

PH2920 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
PH2920
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Low thermal resistance
·Low gate drive current
·SO8 equivalent area footprint
·Low on-state resistance.


Application

·DC-to-DC converters
·Portable appliances
·Switched mode power supplies
·Notebook computers.


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj = 25 to 175 - 20 V
VGS gate-source voltage (DC)   - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10 V; Figure 2 and 3 - 60 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 240 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 62.5 W
Tstg storage temperature   -55 +150
Tj junction temperature   -55 +150
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 60 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 240 A



Description

N-channel enhancement mode field-effect power transistor in a SOT669 (LFPAK)package.

Product availability:

PH2920 in SOT669 (LFPAK).


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Prototyping Products
AVT4168
DE1
Filters
PICO2205A
PICO2204A
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
RF and RFID
X3C26P1-30S
1P620S
View more