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PH1955L

Features: `Logic level threshold`175 rated`Low on-state resistance`Surface-mounted packageApplication·DC-to-DC converters·Motors, lamps and solenoids·General purpose power switching·12 V and 24 V loadsPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source vol...

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SeekIC No. : 004460201 Detail

PH1955L: Features: `Logic level threshold`175 rated`Low on-state resistance`Surface-mounted packageApplication·DC-to-DC converters·Motors, lamps and solenoids·General purpose power switching·12 V and 24 V l...

PH1955L Data Sheet

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Part Number:
PH1955L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

`Logic level threshold
`175 rated
`Low on-state resistance
`Surface-mounted package


Application

·DC-to-DC converters
·Motors, lamps and solenoids
·General purpose power switching
·12 V and 24 V loads


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage 25 Tj 175 - 55 V
VDGR drain-gate voltage (DC) 25 Tj 175 ; RGS = 20 k - 55 V
VGS gate-source voltage   - ±20 V
ID drain current Tmb = 25 ; VGS = 10 V; Figure 2 and 3 - 40 A
Tmb = 100 ; VGS = 10 V; Figure 2 - 28 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 ms; Figure 3 - 160 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 75 W
Tstg storage temperature   -55 +175
Tj junction temperature   -55 +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 40 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 ms - 160 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy		 unclamped inductive load; ID = 40 A;
tp = 0.06 ms; VDD 55 V; RGS = 50 ;
VGS = 10 V; starting at Tj = 25 		- 80 mJ
EDS(AL)R repetitive drain-source avalanche
energy		 unclamped inductive load; ID = 4 A;
tp = 0.06 ms; VDD 55 V; RGS = 50 ;
VGS = 10 V		 - 0.8 mJ



Description

PH1955L, Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.




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