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PH1955L,115

MOSFET N-CH TRENCH 55V

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SeekIC No. : 00151840 Detail

PH1955L,115: MOSFET N-CH TRENCH 55V

PH1955L,115 Data Sheet

floor Price/Ceiling Price

US $ .53~.76 / Piece | Get Latest Price
Part Number:
PH1955L,115
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.76
  • $.68
  • $.57
  • $.53
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : 15 V Continuous Drain Current : 40 A
Resistance Drain-Source RDS (on) : 14.3 Ohms Configuration : Single Triple Source
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : LFPAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : LFPAK
Continuous Drain Current : 40 A
Drain-Source Breakdown Voltage : 55 V
Configuration : Single Triple Source
Gate-Source Breakdown Voltage : 15 V
Resistance Drain-Source RDS (on) : 14.3 Ohms


Parameters:

Technical/Catalog InformationPH1955L,115
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C40A
Rds On (Max) @ Id, Vgs17.3 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 1992pF @ 25V
Power - Max75W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs18nC @ 5V
Package / CaseLFPak-4
FET FeatureLogic Level Gate
Drawing Number568; SOT669; ; 4
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PH1955L,115
PH1955L,115
568 2174 2 ND
56821742ND
568-2174-2



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