PH0912-40

PH0912-40 is a type of avionics pulsed power transistor which has many unique features: The first one is NPN silicon Microwave power transistor. The second one is common base configuration.The third one is it is high efficiency interdigitated geometry. The forth one is diffused emitter ballasting resistors. The fifth one is gold matallization system. The sixth one is Hermatic metal/ceramic package.The seventhone is internal input and output impedance matching.The eighth one is broadband class C operation.
 
There are some absolute maximum ratings about PH0912-40.Collector-emitter votlage(V_CES) is 70 V.Collector current(peak(Ic) is 4.3 A. Power dissipation(P_D) is 110 W.Emitter-base voltage(V_EBO) is 3.0 V.Junction temperature(Tj) is 200. Storage temperature(Tstg) is -65 to +200.Otherwise, there are some electrical characteristics. Collector-emitter breakdwon voltage(BV_CES) is 70 V min when Ic is 18 mA. Collector-emitter leakage current(I_CES) is 1.8 mA max when V_CE is 40 V.Output power(Pout) is 40 W min when Vcc is 36 V,Pin is 6.4 W, F is 960,1090,1215 MHz, N1.Power gian(Gp) is 8.0 dB min when Vcc is 36 V,Pin is 6.4 W, F is 960,1090,1215 MHz, N1. Collector efficiency is 50% min when Vcc is 36 V,Pin is 6.4 W, F is 960,1090,1215 MHz, N1.Input return loss is 9 dB min when Vcc is 36 V,Pin is 6.4 W, F is 960,1090,1215 MHz, N1.Load mismatch tolerance is 2:1 typ when Vcc is 36 V,Pin is 6.4 W, F is 960,1090,1215 MHz, N1.

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