PH0912-10

PH0912-10 is a type of avionics pulsed power transistor which has many unique features: The first one is it is designed for linear amplifier applications. The second one is common emitter configuration.The third one is diffused emitter ballasting. The forth one is internal input and output impedance matching. The fifth one is broadband class C operation. The sixth one is NPN silicon Microwave power transistor. The seventh one is high efficiency interdigitated geometry. The eighth one is hermetic metal/ceramic package.
 
There are some absolute maximum ratings about PH0912-10.Collector-emitter votlage(V_CES) is 70 V.Emitter-base voltage(V_EBO) is 3.0 V.Junction temperature(Tj) is 200. Storage temperature(Tstg) is -65 to +200.Collector current(peak)(Ic) is 1.3 A.Power dissipation(P_D) is 27.5 W.Otherwise, there are some electrical characteristics.Collector-emitter breakdwon voltage(BV_CES) is 70 V min when Ic is 12.5 mA. Collector-emitter leakage current(I_CES) is 1.5 mA max when V_CE is 40 V.Power gain(Gp) is 8.5 dB min when Vcc is 28 V,Pin is 1.4 W, F is 960,1090,1215 MHz. Collector efficiency is 50% min when Vcc is 28 V,Pin is 1.4 W, F is 960,1090,1215 MHz.Input return loss is 9 dB min when Vcc is 28 V,Pin is 1.4 W, F is 960,1090,1215 MHz.Load mismatch tolerance is 2.0:1 typ when Vcc is 28 V,Pin is 1.4 W, F is 960,1090,1215 MHz.

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