PH0912-100

PH0912-100 is a type of avionics pulsed power transistor which has many unique features: The first one is it is designed for JTIDS applications. The second one is common emitter configuration.The third one is diffused emitter ballasting. The forth one is internal input and output impedance matching. The fifth one is broadband class C operation. The sixth one is NPN silicon Microwave power transistor. The seventh one is high efficiency interdigitated geometry. The eighth one is hermetic metal/ceramic package.
 
There are some absolute maximum ratings about PH0912-100.Collector-emitter votlage(V_CES) is 90 V.Emitter-base voltage(V_EBO) is 3.0 V.Junction temperature(Tj) is 200. Storage temperature(Tstg) is -65 to +200.Otherwise, there are some electrical characteristics. Collector-emitter breakdwon voltage(BV_CES) is 90 V min when Ic is 100 mA. Collector-emitter leakage current(I_CES) is 20 mA max when VCE is 40 V.Power gain(Gp) is 6.0 dB min when Vcc is 38 V,Pout is 100 W, F is 980,1090,1215 MHz,N1. Collector efficiency is 40% min when Vcc is 38 V,Pout is 100 W, F is 980,1090,1215 MHz,N1.Input return loss is 10 dB min when Vcc is 38 V,Pout is 100 W, F is 980,1090,1215 MHz,N1.Load mismatch tolerance is 5:1 typ when Vcc is 38 V,Pout is 100 W, F is 980,1090,1215 MHz,N1.

Well, this is a simple introduction to this type of product, if you want to know more about PH0912-100, please pay more attention to our web. Thanks for your attention!