PH0912-150

PH0912-150 is a type of avionics pulsed power transistor which has many unique features: The first one is NPN silicon Microwave power transistor. The second one is common base configuration. The third one is it is designed for JTIDS applications. The forth one is it is high efficiency interdigitated geometry. The fifth one is diffused emitter ballasting resistors. The sixth one is gold matallization system. The seventh one is Hermatic metal/ceramic package.The eighth one is internal input and output impedance matching.The ninth one is broadband class C operation.
 
There are some absolute maximum ratings about PH0912-150.Collector-emitter votlage(V_CES) is 70 V.Emitter-base voltage(V_EBO) is 3.0 V.Collector current(peak)(Ic) is 16.5 A. Power dissipation(PD) is 420 W.Junction temperature(Tj) is 200. Storage temperature(Tstg) is -65 to +200.Otherwise, there are some electrical characteristics. Collector-emitter breakdwon voltage(BV_CES) is 70 V min when Ic is 85 mA. Collector-emitter leakage current(I_CES) is 9.0 mA max when V_CE is 40 V.Thermal resistance is 0.35/W max when Vcc is 36 V,Pin is 24 W, F is 960,1090,1215 MHz, N1.Output power(Pout) is 150 W minwhen Vcc is 36 V,Pin is 24 W, F is 960,1090,1215 MHz, N1.Power gian(Gp) is 8 dB min when Vcc is 36 V,Pin is 24 W, F is 960,1090,1215 MHz, N1. Collector efficiency is 50% min when Vcc is 36 V,Pin is 24 W, F is 960,1090,1215 MHz, N1.Input return loss is 9 dB min when Vcc is 36 V,Pin is 24 W, F is 960,1090,1215 MHz, N1.Load mismatch tolerance is 2:1 typ when Vcc is 36 V,Pin is 24 W, F is 960,1090,1215 MHz, N1.

Well, this is a simple introduction to this type of product, if you want to know more about PH0912-150, please pay more attention to our web. Thanks for your attention!