PH0912-120

PH0912-120 is a type of avionics pulsed power transistor which has many unique features: The first one is NPN silicon Microwave power transistor. The second one is common base configuration. The third one is it is designed for JTIDS applications. The forth one is it is high efficiency interdigitated geometry. The fifth one is diffused emitter ballasting resistors. The sixth one is gold matallization system. The seventh one is Hermatic metal/ceramic package.The eighth one is internal input and output impedance matching.The ninth one is broadband class C operation.
 
There are some absolute maximum ratings about PH0912-120.Collector-emitter votlage(V_CES) is 65 V.Emitter-base voltage(V_EBO) is 3.0 V.Collector current(peak)(Ic) is 15 A. Power dissipation(PD) is 380 W.Junction temperature(Tj) is 200. Storage temperature(Tstg) is -65 to +200.Otherwise, there are some electrical characteristics. Collector-emitter breakdwon voltage(BV_CES) is 55 V min when Ic is 50 mA. Collector-emitter leakage current(I_CES) is 25 mA max when V_CE is 35 V.Thermal resistance is .46/W max when Vcc is 36.6 V,Pin is 120 W, F is 960,1090,1215 MHz, N1.Input power(Pin) is 19 W minwhen Vcc is 36.6 V,Pin is 120 W, F is 960,1090,1215 MHz, N1.Power gian(Gp) is 8 dB min when Vcc is 36.6 V,Pin is 120 W, F is 960,1090,1215 MHz, N1. Collector efficiency is 44% min when Vcc is 36.6 V,Pin is 120 W, F is 960,1090,1215 MHz, N1.Input return loss is 12 dB min when Vcc is 36.6 V,Pin is 120 W, F is 960,1090,1215 MHz, N1.Load mismatch tolerance is 3:1 typ when Vcc is 36.6 V,Pin is 120 W, F is 960,1090,1215 MHz, N1.

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