PH04045-400H

PH04045-400H is a type of bipolar NPN RF power transistor which has four unique features: The first one is gold metalization, emitter ballasted. The second one is internally matched for broadband operation.The third one is common emitter configuration. The forth one is high peak power for UHF applications.

There are some absolute maximum ratings about PH04045-400H.Collector-emitter votlage(VCES) is 70 V.Emitter-base voltage(V_EBO) is 3.5 V.Junction temperature(Tj) is 200. Storage temperature(Tstg) is -65 to +200.Collector current(peak)(Ic) is 14.0 A.Power dissipation(P_D) is 1167.0 W.Otherwise, there are some electrical characteristics.Emitter base breakdown(BV_EBO) is 3.0 V min when Ic is 0 and iE is 10.0 mA. Collector base breakdown(BV_CBO) is 70.0 V min when IC is 100.0 mA and IE is 0. Collector-emitter breakdwon voltage(BV_CES) is 70.0 V min when Ic is 100.0 mA and VBE is 0.Collector-emitter leakage current(I_CES) is 10.0 mA max when V_CE is 40 V and V_BE is 0.Output power(Pout) is 380.0 W max when Vce is 40 V,Pin is 70.0 W,60 uSEC @2% off,f is 450.0.Power gian(Gp) is 7.3 dB min when Vce is 40 V,Pin is 70.0 W,60 uSEC @2% off,f is 450.0. Collector efficiency is 60% min when Vce is 40 V,Pin is 70.0 W,60 uSEC @2% off,f is 450.0.Load mismatch tolerance is 5:1 typ when Vce is 40 V,Pin is 70.0 W,60 uSEC @2% off,f is 450.0.

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