PH0404-30EL

PH0404-30EL is a type of radar pulsed power transistor which has many unique features: The first one is NPN silicon Microwave power transistor. The second one is common base configuration.The third one is diffused emitter ballasting resistors. The forth one is gold matallization system. The fifth one is hermatic metal/ceramic package.The seventh one is reliable fishborne geometry.

There are some absolute maximum ratings about PH0404-30EL.Collector-emitter votlage(V_CES) is 65 V.Emitter-base voltage(V_EBO) is 3.5 V.Junction temperature(Tj) is 200. Storage temperature(Tstg) is -65 to +200.Collector current(peak)(Ic) is 1.8 A.Power dissipation(P_D) is 51 W.Otherwise, there are some electrical characteristics. Collector-emitter breakdwon voltage(BV_CES) is 65 V min when Ic is 10 mA.Collector-emitter leakage current(I_CES) is 2.0 mA max when V_CE is 31.5 V.Input power(Pin) is 4.0 W max when Vcc is 31.5 V,Pout is 30 W, F is 0.420,0.450 GHz.Power gian(Gp) is 8.7 dB min when Vcc is 31.5 V,Pout is 30 W, F is 0.420,0.450 GHz. Collector efficiency is 55% min when Vcc is 31.5 V,Pout is 30 W, F is 0.420,0.450 GHz.Input return loss is 10 dB min when Vcc is 31.5 V,Pout is 30 W, F is 0.420,0.450 GHz.Load mismatch tolerance is 3:1 typ when Vcc is 31.5 V,Pout is 30 W, F is 0.420,0.450 GHz.

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