PF0141

PF0141,the MOS FET power amplifier module for GSM handy phone, has three unique features: The first one is high speed switching which is 0.9 us typ. The second one is high efficiency which is 45% typ. The third one is wide power control range which is 85 dB typ.

There are some absolute maximum ratings about PF0141 when Tc is 258.Supply voltage(V_DD) is 12 V. Supply current(I_DD) is 3 A. APC voltage(V_APC) is 4 V. Input power(Pin) is 20 mW. Operating case temperature is -30 to +100.Storage temperature(Tstg) is -30 to +100.Otherwise, there are also some electrical characteristics about it when Ta is 25. Drain cutoff current(I_DS) is 100 uA max when V_DD is 12 V, V_APC is 0 V.2nd harmonic distortion(2ndH.D.) is -40 dB typ and -30 dB max when Pin is 2 mW, V_DD is 6 V, Pout is 3.2 W(at APC controlled), RL is equal to Rg which is 50 ohms, Tc is 25.3rd harmonic distortion(3rd H.D.) is -40 dB typ and -30 dB max when Pin is 2 mW, V_DD is 6 V, Pout is 3.2 W(at APC controlled), RL is equal to Rg which is 50 ohms, Tc is 25.Input VSWR is 2 typ and 3 max when Pin is 2 mW, V_DD is 6 V, Pout is 3.2 W(at APC controlled), RL is equal to Rg which is 50 ohms, Tc is 25.Output power is 3.6 W min and 4.5 V typ when Pin is 2 mW, V_DD is 6 V, Pout is 3.2 W(at APC controlled), R_L is equal to Rg which is 50 ohms, Tc is 25.

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