PF0120

PF0120 series,the MOS FET power amplifier module for GSM handy phone, has three unique features: The first one is high speed switching which is 1 us. The second one is low power control current which is 1 mA. The third one is wide power control range which is 90 dB typ.

There are some absolute maximum ratings about PF0120 when Tc is 258.Supply voltage(V_DD) is 17 V. Supply current(I_DD) is 4 A. APC voltage(V_APC) is 8 V. Input power(Pin) is 20 mW. Operating case temperature is -30 to +100.Storage temperature(Tstg) is -40 to +100.Otherwise, there are also some electrical characteristics about it when Ta is 25. Drain cutoff current(I_DS) is 500 uA max when V_DD is 17 V, VAPC is 0 V.2nd harmonic distortion(2ndH.D.) is -45 dB typ and -35 dB max when Pin is 4 mW, V_DD is 12.5 V, Pout is 1.2 W, RL is equal to Rg which is 50 ohms.3rd harmonic distortion(3rd H.D.) is -55 dB typ and -45 dB max when Pin is 4 mW, V_DD is 12.5 V, Pout is 1.2 W, RL is equal to Rg which is 50 ohms.Input VSWR is 1.5 typ and 3 max when Pin is 4 mW, V_DD is 12.5 V, Pout is 1.2 W, RL is equal to Rg which is 50 ohms.Output power is 13.5 W min when Pin is 4 mW, V_DD is 12.5 V, Pout is 1.2 W, RL is equal to Rg which is 50 ohms.

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