Features: · 300 mW total power dissipation· Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package· Improved thermal behaviour due to flat leads· Self alignment during soldering due to straight leads· Replaces two SC-75/SC-89 packaged transistors on same PCB area· Reduces required PCB area· Reduc...
PEMD4: Features: · 300 mW total power dissipation· Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package· Improved thermal behaviour due to flat leads· Self alignment during soldering due to straight lea...
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Transistors Switching (Resistor Biased) TRNS DOUBL RET TAPE7
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
Per transistor; for the PNP transistor with negative polarity | |||||
VCBO |
collector-base voltage | open emitter |
- |
50 |
V |
VCEO |
collector-emitter voltage | open base |
- |
50 |
V |
VEBO |
emitter-base voltage | open collector |
- |
5 |
V |
IO |
output current (DC) |
- |
100 |
mA | |
ICM |
peak collector current |
- |
100 |
mA | |
Ptot |
total power dissipation | Tamb 25; note 1 |
- |
200 |
mW |
TSTG |
Storage temperature range |
65 |
+150 |
||
Tj |
junction temperature |
- |
150 |
||
Tamb |
operating ambient temperature |
-65 |
150 |
||
Ptot |
total power dissipation | Tamb 25; note 1 |
- |
300 |
mW |
NPN/PNP resistor-equipped transistors PEMD4 in a SOT666 plastic package.