Features: · 300 mW total power dissipation· Very small 1.6×1.2 mm ultra thin package· Excellent coplanarity due to straight leads· Replaces two SC-75/SC-89 packaged transistors on same PCB area· Reduces required PCB area· Reduced pick and place costs.Application· General purpose switching and ampl...
PEMD10: Features: · 300 mW total power dissipation· Very small 1.6×1.2 mm ultra thin package· Excellent coplanarity due to straight leads· Replaces two SC-75/SC-89 packaged transistors on same PCB area· Red...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
US $.02 - .03 / Piece
Transistors Switching (Resistor Biased) TRNS DOUBL RET TAPE7
SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
Per transistor; for the PNP transistor with negative polarity | |||||
VCBO | collector-base voltage |
open emitter |
- |
50 |
V |
VCEO | collector-emitter voltage |
open base |
- |
50 |
V |
VEBO | emitter-base voltage |
open collector |
- |
10 |
V |
Vi | input voltage TR1 positive negative |
- - - - |
+12 -5 +5 -12 |
V V V V | |
input voltage TR2 positive negative |
|||||
IO | collector current (DC) |
- |
-100 |
mA | |
ICM | peak base current |
- |
100 |
mA | |
Ptot | total power dissipation |
Tamb 25 °C; note 1 |
- |
200 |
mW |
Tstg | storage temperature |
-65 |
+150 |
°C | |
Tj | junction temperature |
- |
150 |
°C | |
Tamb | operating ambient temperature |
-65 |
+150 |
°C | |
Per device | |||||
Ptot | total power dissipation |
Tamb25 °C; note 1 |
- |
300 |
mW |