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PE42650A

Features: • 50 Watt P1dB compression point• 10 Watts <8:1 VSWR (Normal Operation)• 38 dB TX-RX Isolation• 2fo and 3fo < -81 dBc @10 Watts• ESD rugged to 2.0 kV HBM• No blocking capacitors required• 32-lead 5x5 mm QFN packageSpecifications Symbol...

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SeekIC No. : 004457823 Detail

PE42650A: Features: • 50 Watt P1dB compression point• 10 Watts <8:1 VSWR (Normal Operation)• 38 dB TX-RX Isolation• 2fo and 3fo < -81 dBc @10 Watts• ESD rugged to 2.0 kV HB...

PE42650A Data Sheet

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Part Number:
PE42650A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• 50 Watt P1dB compression point
• 10 Watts <8:1 VSWR (Normal Operation)
• 38 dB TX-RX Isolation
• 2fo and 3fo < -81 dBc @10 Watts
• ESD rugged to 2.0 kV HBM
• No blocking capacitors required
• 32-lead 5x5 mm QFN package




Specifications

Symbol Parameter/Conditions Min Max Units
VDD Power supply voltage -0.3 6.0 V
VI Voltage on any Digital input -0.3 VDD+0.3 V
TST Storage temperature range -65 150
TCASE Maximum case temperature 85
Tj Peak maximum junction
temperature (10 seconds max)		 200
PIN TX Input Power1
(VSWR 20:1, 10 seconds)		 40 dBm
TX Input Power1 (50 ) 45 dBm
RX Input Power at ANT pin2
(VSWR 20:1)		 27 dBm
RF Input Power on inactive ports or
supply unbiased		 27 dBm
PD Maximum Power Dissipation from
RF Insertion Loss		 2.8 W
VESD ESD Voltage (HBM, MIL_STD 883
Method 3015.7)		 2000 V
Notes: 1. Supply biased
2. Supply biased or unbiased




Description

The following specification defines an SP3T (single pole three throw) switch for use in cellular and other wireless applications. It has both a standard and attenuated RX mode. The PE42650A uses Peregrine's UltraCMOS™ PE42650A process and also features HaRP™ technology enhancements to deliver high linearity and exceptional harmonics performance. HaRP™ technology is an innovative feature of the UltraCMOS™ process providing upgraded linearity performance.

The PE42650A is manufactured on Peregrine's UltraCMOS™ process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS.






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