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PE4259

Features: • Single-pin or complementary CMOS logic control inputs• Low insertion loss: 0.35 dB at 1000 MHz, 0.5 dB at 2000 MHz• Isolation of 30 dB at 1000 MHz, 20 dB at 2000 MHz• Typical input 1 dB compression point of +33.5 dBm• Ultra-small SC-70 packagePinoutSpecifi...

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SeekIC No. : 004457817 Detail

PE4259: Features: • Single-pin or complementary CMOS logic control inputs• Low insertion loss: 0.35 dB at 1000 MHz, 0.5 dB at 2000 MHz• Isolation of 30 dB at 1000 MHz, 20 dB at 2000 MHz...

PE4259 Data Sheet

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Part Number:
PE4259
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Single-pin or complementary CMOS logic control inputs
• Low insertion loss: 0.35 dB at 1000 MHz, 0.5 dB at 2000 MHz
• Isolation of 30 dB at 1000 MHz, 20 dB at 2000 MHz
• Typical input 1 dB compression point of +33.5 dBm
• Ultra-small SC-70 package




Pinout

Connection Diagram




Specifications

Symbol Parameter/Conditions Min Max Units
VDD Supply voltage -0.3 4.0 V
VI Voltage on any input -0.3 VDD+0.3 V
TST Storage temperature
range		 -65 150 °C
TOP Operating temperature
range		 -10 85 °C
PIN Input power (50Ω) -10 +344 dBm
VESD ESD Voltage (HBM,
ML_STD 883 Method
3015.7)		 2000 V
ESD Voltage (MM,
JEDEC, JESD22-A114-B)		 250
Notes: 3. All RF pins must be DC blocked with an external serie capacitor or held at 0 VDC.
4. To maintain optimum device performance, do not exceed Max PIN at desired operating frequency (see Figure 4).




Description

The PE4259 UltraCMOS™ RF Switch is designed to cover a broad range of applications from near DC through 3000 MHz. This reflective switch integrates on-board CMOS control logic with a low voltage CMOS-compatible control interface, and PE4259 can be controlled using either single-pin or complementary control inputs. Using a nominal +3-volt power supply voltage, a typical input 1 dB compression point of +33.5 dBm can be achieved.

The PE4259 SPDT High Power UltraCMOS™ RF Switch is manufactured in Peregrine's patented Ultra Thin Silicon (UTSi®) CMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS.






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