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PE42510A

Features: • No blocking capacitors required• 50 Watt P1dB compression point• 10 Watts <8:1 VSWR (Normal Operation)• 29 dB Isolation @800 MHz• < 0.3 dB Insertion Loss at 800 MHz• 2fo and 3fo < -84 dBc @ 42.5 dBm• ESD rugged to 2.0 kV HBM• 32-...

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SeekIC No. : 004457813 Detail

PE42510A: Features: • No blocking capacitors required• 50 Watt P1dB compression point• 10 Watts <8:1 VSWR (Normal Operation)• 29 dB Isolation @800 MHz• < 0.3 dB Insertion L...

PE42510A Data Sheet

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Part Number:
PE42510A
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• No blocking capacitors required
• 50 Watt P1dB compression point
• 10 Watts <8:1 VSWR (Normal Operation)
• 29 dB Isolation @800 MHz
• < 0.3 dB Insertion Loss at 800 MHz
• 2fo and 3fo < -84 dBc @ 42.5 dBm
• ESD rugged to 2.0 kV HBM
• 32-lead 5x5 mm QFN package




Pinout

Connection Diagram




Specifications

Symbol
Parameter
Min
Max
Units
VDD
 Power supply voltage
-0.3
4
V
VI
 Voltage on any DC input
-0.3
VDD+ 0.3
V
TST
 Storage temperature range
-65
150
TCASE
 Maximum case temperature
85
Tj
 Peak maximum junction
temperature (10 seconds max)
200
PIN
 RF Input power (VSWR 20:1, 10 seconds)
40
dBm
RF Input Power (50)
45
dBm
RF Input Power, unbiased (VSWR 20:1)
27
dBm
PD
 Maximum Power Dissipation due to
RF Insertion Loss
2.2
W
VESD
 ESD Voltage (HBM, MIL_STD 883 Method 3015.7)
2000
V

Exceeding absolute maximum ratings may cause permanent damage. Operation should be restricted to the limits in the Operating Ranges table. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability.






Description

The following specification PE42510A defines an SPDT (single pole double throw) switch for use in cellular and other wireless applications. The PE42510A uses Peregrine's UltraCMOS™ process and it also features HaRP™ technology enhancements to deliver high linearity and exceptional harmonics performance. HaRP™ technology is an innovative feature of the UltraCMOS™ process providing upgraded linearity performance.

The PE42510A is manufactured on Peregrine's UltraCMOS™ process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS.






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