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PE4237

Features: • Single 3.0-volt power supply• Low insertion loss: 0.35 dB at 1000 MHz, 0.45 dB at 2000 MHz• High isolation of 43 dB at 1000 MHz, 35 dB at 2000 MHz• Typical 1 dB compression point of +32 dBm• Single-pin CMOS or TTL logic control• Available in a 6-lead...

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SeekIC No. : 004457804 Detail

PE4237: Features: • Single 3.0-volt power supply• Low insertion loss: 0.35 dB at 1000 MHz, 0.45 dB at 2000 MHz• High isolation of 43 dB at 1000 MHz, 35 dB at 2000 MHz• Typical 1 dB c...

PE4237 Data Sheet

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Part Number:
PE4237
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Single 3.0-volt power supply
• Low insertion loss: 0.35 dB at 1000 MHz, 0.45 dB at 2000 MHz
• High isolation of 43 dB at 1000 MHz, 35 dB at 2000 MHz
• Typical 1 dB compression point of +32 dBm
• Single-pin CMOS or TTL logic control
• Available in a 6-lead DFN package




Pinout

Connection Diagram




Specifications

Symbol
Parameter/Condition
Min
Max
Unit
VDD
 Power supply voltage
-0.3
4.0
V
VI
 Voltage on CTRL input
-0.3
VDD +
V
VCTRL
 Voltage on CTRL input
5.0
V
TST
 Storage temperature range
-65
150
TOP
 Operating temperature range
-40
85
PIN
 Input power (50 )
35
dBm
VESD
 ESD voltage
(Human Body Model)
250
V





Description

The PE4237 RF Switch is designed to cover a broad range of applications from near DC to 4000 MHz. This reflective switch integrates on-board CMOS control logic driven by a single-pin, low voltage CMOS or TTL control input. Using a nominal +3- volt power supply, a 1 dB compression point of +32 dBm can be achieved. The PE4237 also exhibits outstanding isolation of better than 43 dB at 1000 MHz and is offered in a small 3x3 mm DFN package.

The PE4237 is manufactured on Peregrine's UltraCMOS™ process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS.






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