PE4231

Features: • Optimized for 75 systems• Single +3-volt power supply• Low insertion loss: 0.80 dB at 1.0 GHz• High isolation: 42 dB at 1.0 GHz• Typical input 1 dB compression point of +32 dBm• Single-pin CMOS or TTL logic control• Low costPinoutSpecification...

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PE4231 Picture
SeekIC No. : 004457801 Detail

PE4231: Features: • Optimized for 75 systems• Single +3-volt power supply• Low insertion loss: 0.80 dB at 1.0 GHz• High isolation: 42 dB at 1.0 GHz• Typical input 1 dB compres...

floor Price/Ceiling Price

Part Number:
PE4231
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

• Optimized for 75 systems
• Single +3-volt power supply
• Low insertion loss: 0.80 dB at 1.0 GHz
• High isolation: 42 dB at 1.0 GHz
• Typical input 1 dB compression point of +32 dBm
• Single-pin CMOS or TTL logic control
• Low cost






Pinout

  Connection Diagram




Specifications

Symbol Parameter/
Conditions
Min Max Units
VDD Power supply voltage -0.3 4.0 V
VI Voltage on any input except
for the CTRL input
-0.3 VDD+0.3 V
VCTRL Voltage on CTRL input 5.0 V
TST Storage temperature range -65 150
TOP Operating temperature range -40 85
PIN Input power (50) 33 dBm
VESD ESD voltage (Human Body Model) 200 V





Description

The PE4231 SPDT High Power UltraCMOS™ RF Switch is designed to cover a broad range of applications from DC to 1.3 GHz. This single-supply reflective switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL compatible control input. Using a nominal +3-volt power supply, a typical input 1 dB compression point of +32 dBm can be achieved. The PE4231 also exhibits input-output isolation of better than 42 dB at 1.0 GHz and is offered in a small 8-lead MSOP package.

The PE4231 SPDT High Power UltraCMOS™ RF Switch is manufactured in Peregrine's patented Ultra Thin Silicon (UTSi®) CMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS.






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