Features: • Optimized for 75 systems• Single +3-volt power supply• Low insertion loss: 0.80 dB at 1.0 GHz• High isolation: 42 dB at 1.0 GHz• Typical input 1 dB compression point of +32 dBm• Single-pin CMOS or TTL logic control• Low costPinoutSpecification...
PE4231: Features: • Optimized for 75 systems• Single +3-volt power supply• Low insertion loss: 0.80 dB at 1.0 GHz• High isolation: 42 dB at 1.0 GHz• Typical input 1 dB compres...
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• Optimized for 75 systems
• Single +3-volt power supply
• Low insertion loss: 0.80 dB at 1.0 GHz
• High isolation: 42 dB at 1.0 GHz
• Typical input 1 dB compression point of +32 dBm
• Single-pin CMOS or TTL logic control
• Low cost
Symbol | Parameter/ Conditions |
Min | Max | Units |
VDD | Power supply voltage | -0.3 | 4.0 | V |
VI | Voltage on any input except for the CTRL input |
-0.3 | VDD+0.3 | V |
VCTRL | Voltage on CTRL input | 5.0 | V | |
TST | Storage temperature range | -65 | 150 | |
TOP | Operating temperature range | -40 | 85 | |
PIN | Input power (50) | 33 | dBm | |
VESD | ESD voltage (Human Body Model) | 200 | V |
The PE4231 SPDT High Power UltraCMOS™ RF Switch is designed to cover a broad range of applications from DC to 1.3 GHz. This single-supply reflective switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL compatible control input. Using a nominal +3-volt power supply, a typical input 1 dB compression point of +32 dBm can be achieved. The PE4231 also exhibits input-output isolation of better than 42 dB at 1.0 GHz and is offered in a small 8-lead MSOP package.
The PE4231 SPDT High Power UltraCMOS™ RF Switch is manufactured in Peregrine's patented Ultra Thin Silicon (UTSi®) CMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS.