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PDTC144TEF

Features: · Built-in bias resistors· 250 mW total power dissipation· Very small 1.6 × 0.85 mm thin package· Flat leads· Excellent coplanarity· Improved thermal behaviour· Reduces number of components and required PCB area.Application· General purpose switching and amplification· Inverter and inter...

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PDTC144TEF: Features: · Built-in bias resistors· 250 mW total power dissipation· Very small 1.6 × 0.85 mm thin package· Flat leads· Excellent coplanarity· Improved thermal behaviour· Reduces number of component...

PDTC144TEF Data Sheet

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Part Number:
PDTC144TEF
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Built-in bias resistors
· 250 mW total power dissipation
· Very small 1.6 × 0.85 mm thin package
· Flat leads
· Excellent coplanarity
· Improved thermal behaviour
· Reduces number of components and required PCB area.


Application

· General purpose switching and amplification
· Inverter and interface circuits
· Driver circuits.


Pinout

Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
 collector-base voltage open emitter
-
50
V
VCEO
 collector-emitter voltage open base
-
50
V
VEBO
 emitter-base voltage open collector
-
10
V
IO
 output current (DC)
-
100
mA
ICM
 peak collector current
-
100
mA
Ptot
 total power dissipation Tamb 25; note 1
-
250
mW
TSTG
 Storage temperature
65
+150
Tj
 junction temperature
-
150
Tamb
 operating ambient temperature
-65
+150
Note
1. For mounting conditions, see "Thermal considerations and footprint design for SOT490 in the SC18
Data Handbook".


Description

PDTC144TEF NPN resistor equipped transistor in a SOT490 (SC-89) plastic package.




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